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Top 10 Triode Brand & Manufacturers

This section provides a list of the top 10 Triode manufacturers, Website links, company profile, locations is provided for each company. Also provides a detailed product description of the Triode, including product introduction, history, purpose, principle, characteristics, types, usage and purchase precautions, etc.

Manufacturers (Ranking in no particular order)

ON Semiconductor
ON Semiconductor
Address: Scottsdale, Arizona, United States
Company website: http://www.onsemi.cn/
Company Overview
ON Semiconductor (NASDAQ: ON) has been striving to promote disruptive innovation and create a better future. The company focuses on the automotive and industrial end markets and is currently accelerating changes to embrace the transformation of major trends, including automotive electrification and automotive safety, sustainable energy grids, industrial automation, and 5G and cloud infrastructure. ON Semiconductor's intelligent power and sensing technologies, with a highly differentiated innovative product portfolio, solve the world's complex challenges and problems, leading to a safer, cleaner and smarter world. ON Semiconductor has a sensitive and reliable supply chain and quality program, as well as a strong environmental, social and governance (ESG) program. The company is headquartered in Scottsdale, Arizona, USA, and its global business network includes manufacturing plants, sales offices and design centers covering major markets. ON Semiconductor's discrete device and power module product lineup provides a full range of high, medium and low voltage power discrete devices and advanced power module solutions, including IGBT, MOSFET, SiC, Si/SiC hybrid modules, diodes, SiC diodes and intelligent power modules (IPM). ON Semiconductor's innovative power management products provide better power factor, enhanced active mode efficiency and lower standby power consumption, bringing high-efficiency solutions suitable for various applications. ON Semiconductor's signal conditioning and control include amplifiers, comparators, redrivers, microcontrollers, data converters (ADCs) and digital potentiometers (POTs).
Wingtech Technology Co., Ltd.
Wingtech Technology Co., Ltd.
Address: No. 18, Xincheng Road East, Wangren Town, Tieshan District, Huangshi City, Hubei Province
Company website: https://www.nexperia.cn
Company Overview
Nexperia, a global professional manufacturer of advanced discrete devices, logic devices and MOSFET devices, is an independent company in early 2017. Nexperia attaches great importance to efficiency and produces large quantities of reliable and stable semiconductor components, producing more than 100 billion reliable and stable semiconductor components each year. The company has a rich product portfolio that can meet the stringent standards of the automotive industry. We independently produce the industry's most advanced small packages, combining energy efficiency, thermal efficiency and superior quality. With more than 50 years of expertise, Nexperia has more than 14,000 employees across Asia, Europe and the United States to support global customers.
ROHM Semiconductor (China) Co., Ltd.
ROHM Semiconductor (China) Co., Ltd.
Address: No. 7, Weisan Road, Microelectronics Industrial Zone, Jingang Road, Xiqing District, Tianjin
Company website: https://www.rohm.com.cn/
Company Overview
As a semiconductor and electronic component manufacturer, Rohm has been expanding its business since its founding by accumulating various design technologies, manufacturing technologies, quality assurance technologies, and solution proposal capabilities. These technologies and capabilities accumulated by Rohm over its long development history can be summarized as four major advantages: "integration technology", "IDM (vertical integration)", "rich product group", and "customer orientation". Rohm will give full play to these advantages, focus on the two major technical fields of "power electronics" and "analog", provide customers with high value-added solutions, and contribute to solving social problems.
STMicroelectronics (China) Investment Co., Ltd.
STMicroelectronics (China) Investment Co., Ltd.
Address: OMEI Building, No. 2, East 3rd Street, Haidian District, Beijing
Company Overview
The STMicroelectronics (ST) Group was established in 1988 by the merger of Italy's SGS Microelectronics and France's Thomson Semiconductor. In May 1998, SGS-THOMSON Microelectronics changed its name to STMicroelectronics Ltd. STMicroelectronics is one of the world's largest semiconductor companies. With the goal of becoming a market leader in multimedia application integration and power solutions, STMicroelectronics has a strong product lineup in the world, including both dedicated products with high intellectual property content and innovative products in multiple fields, such as discrete devices, high-performance microcontrollers, secure smart card chips, and micro-electromechanical systems (MEMS) devices. In demanding applications such as mobile multimedia, set-top boxes, and computer peripherals, STMicroelectronics is a pioneer in developing complex ICs using a platform-based design approach and continues to improve this design approach. STMicroelectronics has a well-balanced product portfolio that can meet the needs of all microelectronics users. Global strategic customers' system-on-chip (SoC) projects all specify STMicroelectronics as a partner, and the company also provides full support to local companies to meet local customers' needs for general devices and solutions. STMicroelectronics has announced its intention to form a joint venture with Intel and Francisco Partners to form an independent semiconductor company. The new company, named Numonyx, will focus on providing non-volatile memory solutions for consumer electronics and industrial equipment.
Toshiba (China) Co., Ltd.
Toshiba (China) Co., Ltd.
Address: D01-0-1401A, Building 5, No. 19 Dongfang East Road, Chaoyang District, Beijing
Company Overview
Toshiba was founded in July 1875, formerly known as Tokyo Shibaura Electric Co., Ltd. In 1939, Tokyo Electric and Shibaura Works officially merged to become today's Toshiba. The new name is the first letter of the two companies. Its English name is also a combination of the Japanese pinyin, To represents the pronunciation of the Japanese word "东", and Shiba represents the pronunciation of "芝". Since the 1980s, Toshiba has transformed from a company mainly engaged in home appliances and heavy motors to a comprehensive electronic and electrical company including communications and electronics. In the 1990s, Toshiba has achieved rapid development in digital technology, mobile communication technology and network technology, and successfully transformed from a giant in the home appliance industry to a pioneer in the IT industry. Since Toshiba entered China in 1972 to develop its business, it has a history of more than 50 years in China. In terms of contributing to society through the development of its own business, in the energy field, Toshiba's thermal and hydropower generation technologies and equipment are adopted by many power stations. In other fields, such as parts for railway electric locomotives, electronic components necessary for the information society, Toshiba products have participated in the process of China's development.
Microchip Technology Inc.
Microchip Technology Inc.
Address: USA
Company Overview
Microchip Technology Incorporated was founded in 1989 and is a US listed company. Microchip Technology Incorporated is a global advanced supplier of microcontrollers and analog semiconductors, providing low-risk product development, lower total system cost and faster time to market for thousands of consumer products around the world. Since its establishment, Microchip has paid close attention to the embedded control semiconductor product market. In order to occupy the market, it has concentrated all technical, design, production, sales and other resources to develop two major products: PIC8-bit microcontroller (MCU) and high-quality serial EEPROM. So far, Microchip has launched microcontroller peripherals, analog products, RFID smart cards, KEELOQ security products, and can design more comprehensive and valuable embedded control system solutions to meet the growing needs of users.
Infineon Technologies (China) Co., Ltd.
Infineon Technologies (China) Co., Ltd.
Address: 2-4F, No. 7, Lane 647, Songtao Road, Shanghai Pilot Free Trade Zone
Company Overview
Infineon Technologies was formally established in Munich, Germany on April 1, 1999. It is one of the world's most advanced semiconductor companies. Its predecessor was the semiconductor division of Siemens Group. It became independent in 1999 and went public in 2000. Its Chinese name is Yi Heng Technology was renamed Infineon Technologies in 2002. Infineon Technologies AG, headquartered in Neubiberg, Germany, provides semiconductor and system solutions for the three major technological challenges of modern society: high energy efficiency, mobility and security. Infineon focuses on meeting the three major technological challenges of modern society: high energy efficiency, mobility and security, providing semiconductor and system solutions for automotive and industrial power devices, chip cards and security applications. Infineon Technologies is known for its high reliability, excellent quality and innovation, and has mastered advanced technologies in analog and mixed signal, RF, power and embedded control devices. Infineon Technologies has operations around the world, with offices in Milpitas, California, the United States, and in the Asia Pacific region. It has branches in Singapore and Tokyo, Japan.
Dakai (Shanghai) Electronic Technology Co., Ltd.
Dakai (Shanghai) Electronic Technology Co., Ltd.
Address: Room 3001-3002, No. 3000, Zhongshan North Road, Putuo District, Shanghai
Company website: https://www.diodes.com/en
Company Overview
Diodes Incorporated (Nasdaq: DIOD), a member of the S&P SmallCap 600 and Russell 3000 indices, is a global manufacturer and supplier of high-quality, application-specific standard products for a broad range of discrete, logic, analog and mixed-signal semiconductor markets. Diodes also serves the automotive, industrial, computing, consumer electronics and communications markets. Diodes' products include diodes, rectifiers, transistors, MOSFETs, GPP bridges, GPP rectifiers, protection devices, function-specific arrays, single-gate logic, amplifiers and comparators, Hall-effect and temperature sensors, power management devices including AC-DC converters and controllers, DC-DC switches and linear regulators, and voltage references and LED drivers; and special function devices such as USB power switches, load switches, voltage monitors and motor controllers. Diodes also provides timing, connectivity, switching and signal integrity solutions for high-speed signals. Diodes' corporate headquarters and Americas sales offices are located in Plano, Texas and Milpitas, California. Design, marketing and engineering centers are located in Plano, Milpitas, Taipei, Taoyuan, Zhubei, Shanghai, Yangzhou, Oldham, England, and Neuhaus, Germany. Diodes' wafer production facilities are located in South Portland, Maine, USA; Oldham, Greenock, England; Shanghai and Wuxi, China; and Keelung and Hsinchu. Diodes has assembly and test facilities in Shanghai, Jinan, Chengdu, Wuxi, Zhongli and Keelung, China, and Neuhaus, Germany. Additional engineering, sales, warehousing and logistics offices are located in Taipei, Hong Kong, Shanghai, Shenzhen, Wuhan, Yangzhou; Oldham, England; Seongnam, South Korea; and Munich and Frankfurt, Germany, with support offices around the world. The company's production facilities are certified to internationally recognized standards ISO-9001:2015, ISO 14001:2015 and IATF16949:2016. Diodes currently has C-TPAT certification.
Yangzhou Yangjie Electronic Technology Co., Ltd.
Yangzhou Yangjie Electronic Technology Co., Ltd.
Address: No. 6, Heye West Road, Hanjiang District, Yangzhou City, Jiangsu Province
Company Overview
Yangzhou Yangjie Electronic Technology Co., Ltd. is one of the few outstanding manufacturers in China that integrates the vertical integration of the semiconductor discrete device chip design and manufacturing, device packaging and testing, terminal sales and services. The product line covers discrete device chips, MOSFET, IGBT & power modules, SiC, rectifier devices, protection devices, small signals, etc., providing customers with a package of product solutions. The company's products are widely used in automotive electronics, new energy, industrial control, power supply, home appliances, lighting, security, network communication, consumer electronics and other fields. The company was listed on the Shenzhen Stock Exchange on January 23, 2014, with the stock code 300373.
Jiangsu Changjing Technology Co., Ltd.
Jiangsu Changjing Technology Co., Ltd.
Address: 13th Floor, Building C, Tengfei Building, No. 88 Jiangmiao Road, Research and Innovation Park, Jiangbei New District, Nanjing, Jiangsu Province
Company website: https://www.jscj-elec.com
Company Overview
Jiangsu Changjing Technology Co., Ltd. is a company specializing in the research and development, production and sales of semiconductor products. The company was established in November 2018 and is headquartered in the Research and Innovation Park of Jiangbei New District, Nanjing, Jiangsu. It has subsidiaries and offices in Shenzhen, Shanghai, Beijing, Hong Kong and other places. The company's main products include two categories: finished products (discrete devices, power management ICs) and wafers, covering diodes, transistors, MOSFETs, IGBT single tubes/modules, third-generation semiconductors, and power management IC products represented by LDO, DC-DC, and lithium battery protection. Related products can meet consumer, industrial and automotive standards, and support customers' one-stop procurement needs. The company adheres to the development vision of "creating a world-class semiconductor brand", takes it as its mission to achieve independent control of key core technologies in my country's power semiconductor field, and continues to promote the rapid, steady and sustainable development of business segments such as discrete devices and power management ICs.

Categories related to Triode

Table of Contents

Information

Triode Information

What is a Triode?

A triode is a three - electrode vacuum tube or semiconductor device. In a vacuum - tube triode, it consists of a cathode, an anode (also called a plate), and a control grid. The cathode is the source of electrons, the anode collects the electrons, and the control grid is used to regulate the flow of electrons from the cathode to the anode. In semiconductor triodes, such as bipolar junction transistors (BJTs), it has three regions - the emitter, the base, and the collector. The emitter emits charge carriers (electrons or holes), the base controls the flow of these carriers, and the collector collects them. Triodes are fundamental components in electronic circuits, used for amplification, switching, and other functions.


History of the Triode

  • The vacuum - tube triode was a revolutionary invention. It was developed from the earlier diode vacuum tubes. In 1906, Lee De Forest invented the triode, which added a control grid between the cathode and the anode of a diode. This innovation allowed for the amplification of electrical signals. The triode vacuum tube became the cornerstone of early radio and electronics technology.
  • As electronics advanced, semiconductor technology emerged. The development of the bipolar junction transistor (a type of semiconductor triode) in the late 1940s by Bell Labs revolutionized the field. Semiconductor triodes offered advantages such as smaller size, lower power consumption, and greater reliability compared to vacuum - tube triodes. They quickly found applications in a wide range of electronic devices, from radios to early computers.
  • In modern electronics, triodes, especially semiconductor triodes, continue to play a crucial role. Their performance has been continuously improved through advancements in semiconductor manufacturing processes. They are now integral components in integrated circuits, power electronics, and communication systems, with ever - increasing capabilities in terms of speed, power handling, and efficiency.


Purpose of the Triode

  • Amplification: One of the primary purposes of a triode is to amplify electrical signals. In an audio amplifier circuit, for example, a triode can take a small input signal (such as from a microphone) and amplify it to a level suitable for driving a speaker. The control grid in a vacuum - tube triode or the base in a semiconductor triode can adjust the flow of electrons or charge carriers, thereby increasing the amplitude of the output signal compared to the input signal.
  • Switching: Triodes can also be used as electronic switches. In digital circuits, a semiconductor triode can be turned on or off to control the flow of current through a circuit. For example, in a computer's logic circuits, triodes are used to implement binary logic functions such as AND, OR, and NOT gates. By controlling the base or grid voltage, the triode can quickly change from a conducting (on) state to a non - conducting (off) state and vice - versa.
  • Oscillation: Triodes can be used to generate oscillating signals. In radio - frequency (RF) oscillators, a triode is configured in a circuit such that it sustains an alternating current at a specific frequency. This is used in radio transmitters and receivers to generate the carrier wave or local oscillator signal necessary for signal transmission and reception.


Principle of the Triode

  • Vacuum - Tube Triode: In a vacuum - tube triode, electrons are emitted from the hot cathode. The control grid, which is a wire mesh located between the cathode and the anode, can control the flow of electrons. When a negative voltage is applied to the control grid relative to the cathode, it repels the electrons and reduces the current flowing to the anode. Conversely, a less negative or positive voltage on the grid allows more electrons to reach the anode. The relationship between the grid voltage and the anode current is non - linear and is the basis for the amplification and other functions of the triode.
  • Semiconductor Triode (BJT): In a bipolar junction transistor, the emitter - base junction is forward - biased, and the base - collector junction is reverse - biased. When a small current is injected into the base, it controls a much larger current flowing from the emitter to the collector. The amplification factor of the transistor is determined by the ratio of the collector current to the base current. The behavior of the semiconductor triode can be understood through the principles of semiconductor physics, including the diffusion and recombination of charge carriers in the different regions of the transistor.


Features of the Triode

  • Amplification Factor: Triodes have a characteristic amplification factor. In vacuum - tube triodes, it is related to the geometry and electrical characteristics of the tube. In semiconductor triodes, it is determined by the doping levels and physical dimensions of the transistor. A high amplification factor allows for more significant signal amplification and is an important parameter for amplifier design.[!--empirenews.page--]
  • Non - linearity: The relationship between the input and output signals of a triode is non - linear. While this can cause distortion in amplification, it can also be exploited in certain applications such as in frequency - mixing and modulation circuits. Non - linear characteristics are used to generate new frequencies or to change the characteristics of an input signal.
  • Input - Output Isolation: Triodes provide a degree of isolation between the input and output circuits. In a vacuum - tube triode, the control grid has a relatively high impedance, which means that the input signal source is not significantly loaded by the anode circuit. In semiconductor triodes, the base - emitter junction can also provide isolation, allowing for more flexible circuit design.
  • Speed and Frequency Response: The speed at which a triode can respond to changes in the input signal is an important feature. Semiconductor triodes generally have a faster response time compared to vacuum - tube triodes. The frequency response of a triode determines the range of frequencies over which it can effectively operate. High - frequency triodes are designed to handle radio - frequency and microwave signals, while others are optimized for audio - frequency applications.
  • Power - Handling Capacity: Triodes can handle different amounts of power. Vacuum - tube triodes can handle relatively high power levels and are used in high - power audio amplifiers and radio transmitters. Semiconductor triodes can also handle significant power, especially power transistors, which are designed to handle high - current and high - voltage applications such as in power supplies and motor - control circuits.


Types of the Triode

  • Vacuum - Tube Triode:
    • Direct - Heated Triode: In this type, the cathode is directly heated by an electric current. The filament that heats the cathode also serves as the electron - emitting source. These triodes were used in early radio receivers and are known for their warm, characteristic sound in audio applications.
    • Indirect - Heated Triode: Here, the cathode is heated by a separate heater element. This design allows for better isolation between the heating circuit and the electron - emitting function and is more commonly used in modern vacuum - tube applications.
  • Semiconductor Triode (BJT):
    • NPN - Type BJT: In an NPN transistor, the emitter is made of N - type semiconductor material, the base is P - type, and the collector is N - type. The majority of charge carriers are electrons, and it is a commonly used configuration for amplification and switching in positive - supply - based circuits.
    • PNP - Type BJT: In a PNP transistor, the emitter is P - type, the base is N - type, and the collector is P - type. The majority of charge carriers are holes. PNP transistors are often used in negative - supply - based circuits or in applications where the input and output polarities are more conveniently matched to a PNP configuration.


Precautions for using the Triode

  • Operating Voltages and Currents: For both vacuum - tube and semiconductor triodes, it's crucial to operate within the specified voltage and current limits. Exceeding these limits can lead to damage of the device. In vacuum - tube triodes, excessive plate voltage can cause arcing and damage the tube. In semiconductor triodes, over - current can lead to overheating and destruction of the transistor.
  • Heating in Vacuum - Tube Triodes: In vacuum - tube triodes, proper heating of the cathode is essential. If the cathode is not heated to the correct temperature, the electron emission will be insufficient, affecting the performance of the triode. On the other hand, over - heating can reduce the lifespan of the tube. Ensure that the heater voltage and current are within the recommended range.
  • Biasing in Semiconductor Triodes: Semiconductor triodes require proper biasing to operate correctly. Incorrect biasing can lead to distortion, reduced amplification, or even device failure. The base - emitter voltage should be set according to the characteristics of the transistor to ensure that it operates in the desired active, saturation, or cutoff region.
  • Thermal Management in Semiconductor Triodes: Semiconductor triodes generate heat during operation, especially in high - power applications. Adequate heat - sinking is necessary to prevent overheating. The heat sink should be properly sized and attached to the transistor to ensure efficient heat dissipation and maintain the device's temperature within the safe operating range.


Things to consider when purchasing the Triode

  • Application Requirements: Determine the specific requirements of your application, such as the required amplification factor, frequency response, power - handling capacity, and switching speed. Based on these requirements, select a triode with the appropriate characteristics. For example, if you're designing a high - fidelity audio amplifier, you may need a triode with a high amplification factor and a wide, flat frequency response.[!--empirenews.page--]
  • Type of Triode: Consider the different types of triodes available, such as vacuum - tube or semiconductor, and the subtypes within each category (e.g., NPN or PNP for semiconductor triodes). Choose the type that best suits your application's needs. For applications where a warm, vintage sound is desired, a vacuum - tube triode may be preferred. For compact, low - power, and high - speed applications, a semiconductor triode is usually a better choice.
  • Performance Characteristics: Look at the performance parameters of the triode, such as gain, input and output impedance, noise figure, and power dissipation. These characteristics should match the demands of your application to ensure efficient and reliable operation. Compare different products and their performance metrics to make an informed decision.
  • Cost and Budget: Establish a budget for the triode purchase. The cost can vary significantly depending on the type, performance, and brand of the triode. Consider not only the initial purchase price but also the long - term costs such as maintenance, replacement, and potential impact on the overall system performance. Sometimes, a more expensive triode with better performance and reliability may be a more cost - effective choice in the long run.
  • Manufacturer Support and Training: Select a reputable manufacturer that provides good technical support and training. Operating and using triodes correctly may require some technical knowledge, and the manufacturer should offer resources such as user manuals, online tutorials, and customer support to help you get the most out of the triode.


Terms of the Triode

  • Amplification Factor (μ): In a vacuum - tube triode, it's the ratio of the change in plate voltage to the change in grid voltage required to produce the same change in plate current. In a semiconductor triode, it's related to the ratio of collector current to base current change and is a measure of the amplification ability of the triode.
  • Transconductance (gm): It's the ratio of the change in plate current (in vacuum - tube triode) or collector current (in semiconductor triode) to the change in grid or base voltage, respectively. It represents the sensitivity of the output current to the input voltage and is an important parameter for amplifier design.
  • Plate Resistance (rp): In a vacuum - tube triode, it's the ratio of the change in plate voltage to the change in plate current when the grid voltage is held constant. It's a measure of the internal resistance of the triode and affects the output impedance of the device.
  • Base - Emitter Voltage (VBE): In a semiconductor triode, it's the voltage across the base - emitter junction. It's a crucial parameter for biasing the transistor and determining its operating point.
  • Collector - Emitter Saturation Voltage (VCE(sat)): In a semiconductor triode, it's the voltage across the collector - emitter junction when the transistor is in the saturation state. It's an important parameter for switching applications and indicates the minimum voltage drop across the transistor when it's fully turned on.